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TDA2006 12w audio amplifier may 1995 pentawatt ordering numbers : TDA2006v TDA2006h description the TDA2006 is a monolithic integrated circuit in pentawatt package, intended for use as a low frequency class "ab" amplifier. at 12v, d = 10 % typically it provides 12w output power on a 4 w load and 8w on a 8 w . the TDA2006 provides high output current and has very low harmonic and cross-over distortion. further the device incorpo- rates an original (and patented) short circuit protec- tion system comprising an arrangement for automatically limiting the dissipated power so as to keep the working point of the output transistors within their safe operating area. a conventional thermal shutdown system is also included. the TDA2006 is pin to pin equivalent to the tda2030. typical application circuit 1/12
schematic diagram absolute maximum ratings symbol parameter value unit v s supply voltage 15 v v i input voltage v s v i differential input voltage 12 v i o output peak current (internaly limited) 3 a p tot power dissipation at t case = 90 c20w t stg , t j storage and junction temperature C 40 to 150 c thermal data symbol parameter value unit r th (j-c) thermal resistance junction-case max 3 c/w pin connection TDA2006 2/12
electrical characteristics (refer to the test circuit ; v s = 12v, t amb = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit v s supply voltage 6 15 v i d quiescent drain current v s = 15v 40 80 ma i b input bias current v s = 15v 0.2 3 m a v os input offset voltage v s = 15v 8mv i os input offset current v s = 15v 80 na v os output offset voltage v s = 15v 10 100 mv p o output power d = 10%, f = 1khz r l = 4 w r l = 8 w 6 12 8 w d distortion p o = 0.1 to 8w, r l = 4 w , f = 1khz p o = 0.1 to 4w, r l = 8 w , f = 1khz 0.2 0.1 % % v i input sensitivity p o = 10w, r l = 4 w , f = 1khz p o = 6w, r l = 8 w , f = 1khz 200 220 mv mv b frequency response (C 3db) p o = 8w, r l = 4 w 20hz to 100khz r i input resistance (pin 1) f = 1khz 0.5 5 m w g v voltage gain (open loop) f = 1khz 75 db g v voltage gain (closed loop) f = 1khz 29.5 30 30.5 db e n input noise voltage b (C 3db) = 22hz to 22khz, r l = 4 w 310 m v i n input noise current b (C 3db) = 22hz to 22khz, r l = 4 w 80 200 pa svr supply voltage rejection r l = 4 w , r g = 22k w , f ripple = 100hz (*) 40 50 db i d drain current p o = 12w, r l = 4 w p o = 8w, r l = 8 w 850 500 ma ma t j thermal shutdown junction temperature 145 c (*) referring to figure 15, single supply. TDA2006 3/12
figure 1 : output power versus supply voltage figure 2 : distortion versus output power figure 3 : distortion versus frequency figure 4 : distortion versus frequency figure 5 : sensitivity versus output power figure 6 : sensitivity versus output power TDA2006 4/12
figure 7 : frequency response with different val- ues of the rolloff capacitor c8 (see figure 13) figure 8 : value of c8 versus voltage gain for dif- ferent bandwidths (see figure 13) figure 9 : quiescent current versus supply voltage figure 10 : supply voltage rejection versus voltage gain figure 11 : power dissipation and efficiency ver- sus output power figure 12 : maximum power dissipation versus supply voltage (sine wave operation) TDA2006 5/12
figure 13 : application circuit with spilt power supply figure 14 : p.c. board and components layout of the circuit of figure 13 (1:1 scale) TDA2006 6/12
figure 15 : application circuit with single power supply figure 16 : p.c. board and components layout of the circuit of figure 15 (1:1 scale) TDA2006 7/12
figure 17 : bridge amplifier configuration with split power supply (p o = 24w, v s = 12v) practical considera tions printed circuit board the layout shown in figure 14 should be adopted by the designers. if different layout are used, the ground points of input 1 and input 2 must be well decoupled from ground of the output on which a rather high current flows. assembly suggestion no electrical isolation is needed between the pack- age and the heat-sink with single supply voltage configuration. application suggestion the recommended values of the components are the ones shown on application circuits of figure 13. different values can be used. the table 1 can help the designers. table 1 component recommanded value purpose larger than recommanded value smaller than recommanded value r 1 22 k w closed loop gain setting increase of gain decrease of gain (*) r 2 680 w closed loop gain setting decrease of gain (*) increase of gain r 3 22 k w non inverting input biasing increase of input impedance decrease of input impedance r 4 1 w frequency stability danger of oscillation at high frequencies with inductive loads r 5 3 r 2 upper frequency cut-off poor high frequencies attenuation danger of oscillation c 1 2.2 m f input dc decoupling increase of low frequencies cut-off c 2 22 m f inverting input dc decoupling increase of low frequencies cut-off c 3 c 4 0.1 m f supply voltage by pass danger of oscillation c 5 c 6 100 m f supply voltage by pass danger of oscillation c 7 0.22 m f frequency stability danger of oscillation c 8 1 2 p br 1 upper frequency cut-off lower bandwidth larger bandwidth d 1 d 2 1n4001 to protect the device against output voltage spikes. (*) closed loop gain must be higher than 24db. TDA2006 8/12
short circuit protection figure 18 : maximum output current versus voltage v ce (sat) accross each out- put transistor figure 19 : safe operating area and collector characteristics of the protected power transistor the TDA2006 has an original circuit which limits the current of the output transistors. figure 18 shows that the maximum output current is a func- tion of the collector emitter voltage ; hence the output transistors work within their safe operating area (figure 19). this function can therefore be considered as being peak power limiting rather than simple current lim- iting. it reduces the possibility that the device gets dam- aged during an accidental short circuit from ac output to ground. thermal shut down the presence of a thermal limiting circuit offers the following advantages : 1) an overload on the output (even if it is permanent), or an above limit ambient temperature can be easily supported since the t j cannot be higher than 150c. 2) the heatsink can have a smaller factor of safety compared with that of a conventional circuit. there is no possibility of device damage due to high junction temperature. if for any reason, the junction temperature in- creases up to 150 c, the thermal shutdown simply reduces the power dissipation and the current con- sumption. the maximum allowable power dissipation de- pends upon the size of the external heatsink (i.e. its thermal resistance) ; figure 22 shows the dissi- pable power as a function of ambient temperature for different thermal resistances. figure 20 : output power and drain current ver- sus case temlperature (r l = 4 w ) figure 21 : output power and drain current ver- sus case temlperature (r l = 8 w ) TDA2006 9/12
figure 22 : maximum allowable power dissipa- tion versus ambient temperature dimension suggestion the following table shows the length of the heatsink in figure 23 for several values of p tot and r th . p tot (w) 12 8 6 lenght of heatsink (mm) 60 40 30 r th of heatsink ( c/w) 4.2 6.2 8.3 figure 23 : example of heatsink TDA2006 10/12
l2 l3 l5 l7 l6 dia. a c d e d1 h3 h2 f g g1 l1 l mm1 f1 pentawatt package mechanical data dim. mm inch min. typ. max. min. typ. max. a 4.8 0.189 c 1.37 0.054 d 2.4 2.8 0.094 0.110 d1 1.2 1.35 0.047 0.053 e 0.35 0.55 0.014 0.022 f 0.8 1.05 0.031 0.041 f1 1 1.4 0.039 0.055 g 3.4 0.126 0.134 0.142 g1 6.8 0.260 0.268 0.276 h2 10.4 0.409 h3 10.05 10.4 0.396 0.409 l 17.85 0.703 l1 15.75 0.620 l2 21.4 0.843 l3 22.5 0.886 l5 2.6 3 0.102 0.118 l6 15.1 15.8 0.594 0.622 l7 6 6.6 0.236 0.260 m 4.5 0.177 m1 4 0.157 dia 3.65 3.85 0.144 0.152 TDA2006 11/12
information furnished is believed to be accurate and rel iable. however, sgs-thomson microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectroni cs. specifications mentioned in this publication are subject to change wi thout notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in lif e support devices or systems without express written approval of sgs-thomson microelectronics. ? 1995 sgs-thomson microelectronics - all rights reserved pentawatt? is registered trademark of sgs-thomson microelectronics sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - sing a- pore - spain - sweden - switzerland - taiwan - thaliand - united kingdom - u.s.a. TDA2006 12/12

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